leshan radio company, ltd. MMVL105GT1?1/2 plastic, case 477 sod? 323 1 2 maximum ratings symbol rating v alue unit v r continuous reverse voltage 30 vdc i f peak forward current 200 madc thermal characteristics symbol characteristic max unit p d t otal device dissipation fr -5 board,* 200 mw t a = 25c derate above 25c 1.57 mw/c r q ja themal resistance junction toambient 635 c/w t j, tstg junction and storage temperature 150 c *fr?4 minimum pad electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min max unit reverse breakdownvoltage v (br)r 30 ? vdc (i r = 10 adc) reverse voltage leakage current i r ? 50 nadc (v r = 28 vdc) c t q c r , v r = 25 vdc, f = 1.0 mhz v r = 3.0 vdc c 3 /c 25 pf f = 50 mhz f = 1.0 mhz device type min max typ min max mmvl105t1 1.5 2.8 250 4.0 6.5 this device is designed in the surface mount package for general frequency control and tuning applications. it provides solid?state reliability in replacement of mechanical tuning methods. controlled and uniform tuning ratio device marking: m4e MMVL105GT1 30 volt voltage variable capacitance diodes silicon tuning diode ordering information device package MMVL105GT1 sod?323 3000 / tape & reel shipping 2 anode 1 cathode
leshan radio company, ltd. MMVL105GT1?2/2 MMVL105GT1 typical characteristics figure 1. diode capacitance 20 16 12 8.0 4.0 0 0.3 1.0 10 20 30 v r , reverse voltage (volts) c t , diode capacitance (pf) figure 2. figure of merit f, frequency (mhz) figure 3. diode capacitance t a , ambient temperature ( c) q, figure of merit 10 1000 100 10 100 1000 c t , diode capacitance (normalized) 1.04 75 1.02 1.00 0.98 0.96 25 +25 +75 +125 v r = 3.0 vdc f = 1.0 mhz 18 14 10 6.0 2.0 f = 1.0 mhz t a = 25 c v r = 3 vdc t a = 25 c 50 0 +50 +100 1.03 1.01 0.99 0.97 0.5 2.0 3.0 5.0
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